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PD - 95549A SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRFR13N15DPBF IRFU13N15DPbF HEXFET(R) Power MOSFET VDSS 150V RDS(on) max 0.18 ID 14A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR13N15D I-Pak IRFU13N15D Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 14 9.8 56 86 0.57 30 3.8 -55 to + 175 300 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes through are on page 10 www.irf.com 1 12/9/04 IRFR/U13N15DPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.17 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.18 VGS = 10V, ID = 8.3A 5.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.0 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 19 5.5 9.4 8.0 26 12 11 620 130 38 780 62 110 Max. Units Conditions --- S VDS = 50V, ID = 8.3A 29 ID = 8.3A 8.2 nC VDS = 120V 14 VGS = 10V, --- VDD = 75V --- ID = 8.3A ns --- RG = 11 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 130 8.3 8.6 Units mJ A mJ Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. --- --- --- Min. Typ. Max. Units Max. 1.75 50 110 Units C/W Diode Characteristics IS ISM VSD trr Qrr ton Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse --- --- 56 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 8.3A, VGS = 0V --- 110 --- ns TJ = 25C, IF = 8.3A --- 520 --- nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U13N15DPbF 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 10 1 5.0V 1 0.1 5.0V 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 14A I D , Drain-to-Source Current (A) 2.5 TJ = 175 C 10 2.0 1.5 TJ = 25 C 1 1.0 0.5 0.1 5 6 7 8 V DS = 50V 20s PULSE WIDTH 9 10 11 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U13N15DPbF 10000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = Cds + Cgd 20 ID = 8.3A VDS = 120V VDS = 75V VDS = 30V 16 C, Capacitance(pF) 1000 Ciss 12 100 Coss 8 Crss 4 10 1 10 100 1000 VDS , Drain-to-Source Voltage (V) 0 0 5 10 15 FOR TEST CIRCUIT SEE FIGURE 13 20 25 30 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 I D , Drain Current (A) T = 175 C J 100 10us 10 100us 1ms T = 25 C J 1 1 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 0.1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U13N15DPbF 14 12 V DS VGS RG VGS Pulse Width 1 s Duty Factor 0.1 % RD D.U.T. + I D , Drain Current (A) 10 8 6 4 2 0 25 50 75 100 125 150 175 -VDD Fig 10a. Switching Time Test Circuit VDS 90% TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U13N15DPbF 15V EAS , Single Pulse Avalanche Energy (mJ) 240 TOP 200 VDS L DRIVER BOTTOM ID 3.4A 5.9A 8.3A 160 RG 20V D.U.T IAS tp + V - DD A 120 0.01 Fig 12a. Unclamped Inductive Test Circuit 80 40 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 12V .2F 50K .3F QGS VG QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U13N15DPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFR/U13N15DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF R120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" PART NUMBER INT ERNAT IONAL RECT IF IER LOGO IRFU120 916A 12 34 ASS EMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 34 DAT E CODE P = DESIGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS SEMBLY S IT E CODE AS S EMBLY LOT CODE 8 www.irf.com IRFR/U13N15DPbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMB LY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in assembly line pos ition indicates "Lead-F ree" INT ERNAT IONAL RECT IF IER LOGO PART NUMBER IRF U120 919A 56 78 AS SEMB LY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 56 78 AS S EMB LY LOT CODE DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMB LY SIT E CODE www.irf.com 9 IRFR/U13N15DPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 3.8mH RG = 25, IAS = 8.3A. ISD 8.3A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 10 www.irf.com |
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